DTD114ECHZGT116

Teknik Özellikler

Resistor Emitter Base R2

10 k Ω

Vce Saturation Max Ib Ic

300mV @ 2.5mA, 50mA

Ambalaj

Cut Tape (CT)

ECCN Kodu

EAR99

Seri

Automotive, AEC-Q101

RoHS Durumu

ROHS3 Compliant

Montaj Tipi

Surface Mount

Yüzey Montaj

YES

Transistor Application

SWITCHING

Terminal Pozisyonu

DUAL

Configuration

SINGLE WITH BUILT-IN RESISTOR

Dc Current Gain Hfe Min Ic Vce

56 @ 50mA 5V

Transistor Type

NPN - Pre-Biased + Diode

Currentcollector Ic Max

500mA

Collectoremitter Voltagemax

50V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Yayın Yılı

2016

Power Max

200mW

Transistor Element Material

SILICON

Terminal Sayısı

3

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Polaritychannel Type

NPN

Number Of Elements

1

Resistor Base R1

10 k Ω

Terminal Formu

GULL WING

Kılıf / Paket

TO-236-3, SC-59, SOT-23-3

Fabrika Tedarik Süresi

13 Weeks

Transition Frequency

200MHz

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

REACH Uyumluluk Kodu

not_compliant

Jesd30 Code

R-PDSO-G3

Parça Durumu

Active

Frequency Transition

200MHz

Additional Feature

BUILT IN BIAS RESISTANCE RATIO IS 1.0