DTD113EKFRAT146

Teknik Özellikler

Seri

Automotive, AEC-Q101

Ambalaj

Tape & Reel (TR)

Vce Saturation Max Ib Ic

300mV @ 2.5mA, 50mA

Resistor Emitter Base R2

1 k Ω

Yüzey Montaj

YES

Montaj Tipi

Surface Mount

RoHS Durumu

ROHS3 Compliant

Currentcollector Ic Max

500mA

Transistor Type

NPN - Pre-Biased

Configuration

SINGLE WITH BUILT-IN RESISTOR

Dc Current Gain Hfe Min Ic Vce

33 @ 50mA 5V

Terminal Pozisyonu

DUAL

Transistor Application

SWITCHING

Terminal Sayısı

3

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Power Max

200mW

Transistor Element Material

SILICON

Nem Hassasiyeti (MSL)

1 (Unlimited)

Resistor Base R1

1 k Ω

Terminal Formu

GULL WING

Number Of Elements

1

Polaritychannel Type

NPN

Voltage Collector Emitter Breakdown Max

50V

Frequency Transition

200MHz

Fabrika Tedarik Süresi

13 Weeks

REACH Uyumluluk Kodu

not_compliant

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Transition Frequency

200MHz

Current Collector Cutoff Max

500nA

Parça Durumu

Active

Jesd30 Code

R-PDSO-G3

Kılıf / Paket

TO-236-3, SC-59, SOT-23-3

Additional Feature

BUILT IN BIAS RESISTANCE RATIO IS 1.0