DTD113ECT116

Teknik Özellikler

Collectoremitter Breakdown Voltage

50V

HTS Kodu

8541.21.00.75

Qualification Status

Not Qualified

Terminal Formu

GULL WING

Resistor Base R1

1 k Ω

Polaritychannel Type

NPN

Collector Emitter Voltage Vceo

300mV

Number Of Elements

1

Operating Temperature Max

150°C

Pin Sayısı

3

Additional Feature

DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 1

Frequency Transition

200MHz

Kılıf / Paket

TO-236-3, SC-59, SOT-23-3

Parça Durumu

Active

Jesd30 Code

R-PDSO-G3

Fabrika Tedarik Süresi

13 Weeks

Current Collector Cutoff Max

500nA

Transition Frequency

200MHz

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

REACH Uyumluluk Kodu

not_compliant

Montaj Tipi

Surface Mount

RoHS Durumu

ROHS3 Compliant

ECCN Kodu

EAR99

Max Breakdown Voltage

50V

Resistor Emitter Base R2

1 k Ω

Ambalaj

Tape & Reel (TR)

Vce Saturation Max Ib Ic

300mV @ 2.5mA, 50mA

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Terminal Sayısı

3

Montaj

Surface Mount

Yayın Yılı

2016

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Element Material

SILICON

Power Max

200mW

Transistor Type

NPN - Pre-Biased

Vcesatmax

0.3 V

Max Power Dissipation

200mW

Transistor Application

SWITCHING

Terminal Pozisyonu

DUAL

Dc Current Gain Hfe Min Ic Vce

33 @ 50mA 5V