DTC144ECAT116

Teknik Özellikler

Yayın Yılı

2015

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Element Material

SILICON

Power Max

200mW

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Terminal Sayısı

3

Montaj

Surface Mount

Max Power Dissipation

200mW

Transistor Application

SWITCHING

Terminal Pozisyonu

DUAL

Dc Current Gain Hfe Min Ic Vce

68 @ 5mA 5V

Max Collector Current

100mA

Configuration

SINGLE WITH BUILT-IN RESISTOR

Transistor Type

NPN - Pre-Biased

Vcesatmax

0.3 V

RoHS Durumu

ROHS3 Compliant

Montaj Tipi

Surface Mount

Resistor Emitter Base R2

47 k Ω

Vce Saturation Max Ib Ic

300mV @ 500μA, 10mA

Ambalaj

Tape & Reel (TR)

ECCN Kodu

EAR99

Max Breakdown Voltage

50V

Additional Feature

DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 1

Pin Sayısı

3

Kılıf / Paket

TO-236-3, SC-59, SOT-23-3

Parça Durumu

Active

Jesd30 Code

R-PDSO-G3

Fabrika Tedarik Süresi

13 Weeks

Current Collector Cutoff Max

500nA

Transition Frequency

250MHz

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

REACH Uyumluluk Kodu

not_compliant

Frequency Transition

250MHz

Collectoremitter Breakdown Voltage

50V

HTS Kodu

8541.21.00.75

Qualification Status

Not Qualified

Collector Emitter Voltage Vceo

300mV

Polaritychannel Type

NPN

Number Of Elements

1

Operating Temperature Max

150°C