DTC143EU3T106

Teknik Özellikler

Power Max

200mW

Transistor Element Material

SILICON

Nem Hassasiyeti (MSL)

1 (Unlimited)

Terminal Sayısı

3

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Configuration

SINGLE WITH BUILT-IN RESISTOR

Dc Current Gain Hfe Min Ic Vce

30 @ 10mA 5V

Transistor Application

SWITCHING

Terminal Pozisyonu

DUAL

Currentcollector Ic Max

100mA

Transistor Type

NPN - Pre-Biased

RoHS Durumu

ROHS3 Compliant

Yüzey Montaj

YES

Montaj Tipi

Surface Mount

Vce Saturation Max Ib Ic

300mV @ 500μA, 10mA

Ambalaj

Tape & Reel (TR)

Resistor Emitter Base R2

4.7 k Ω

Additional Feature

BUILT IN BIAS RESISTANCE RATIO IS 1

Fabrika Tedarik Süresi

13 Weeks

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Transition Frequency

250MHz

Parça Durumu

Active

Jesd30 Code

R-PDSO-G3

Kılıf / Paket

SC-70, SOT-323

Frequency Transition

250MHz

Voltage Collector Emitter Breakdown Max

50V

Number Of Elements

1

Polaritychannel Type

NPN

Resistor Base R1

4.7 k Ω

Terminal Formu

GULL WING