DTC123JCAT116

Teknik Özellikler

Montaj

Surface Mount

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Terminal Sayısı

3

REACH Uyumluluk Kodu

not_compliant

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Vce Saturation Max Ib Ic

300mV @ 250μA, 5mA

Montaj Tipi

Surface Mount

Yayın Yılı

2006

Nem Hassasiyeti (MSL)

1 (Unlimited)

Dc Current Gain Hfe Min Ic Vce

80 @ 10mA 5V

Collector Emitter Voltage Vceo

300mV

Configuration

SINGLE WITH BUILT-IN RESISTOR

Additional Feature

DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 21.36

Frequency Transition

250MHz

Terminal Pozisyonu

DUAL

Fabrika Tedarik Süresi

13 Weeks

Max Power Dissipation

200mW

Number Of Elements

1

Parça Durumu

Active

Ambalaj

Tape & Reel (TR)

Transistor Application

SWITCHING

ECCN Kodu

EAR99

Transition Frequency

250MHz

Collectoremitter Breakdown Voltage

50V

Power Max

200mW

Terminal Formu

GULL WING

Current Collector Cutoff Max

500nA

Vcesatmax

0.3 V

Qualification Status

Not Qualified

Resistor Emitter Base R2

47 k Ω

Resistor Base R1

2.2 k Ω

RoHS Durumu

ROHS3 Compliant

Polaritychannel Type

NPN

Transistor Type

NPN - Pre-Biased

Jesd30 Code

R-PDSO-G3

HTS Kodu

8541.21.00.75

Kılıf / Paket

TO-236-3, SC-59, SOT-23-3

Transistor Element Material

SILICON

Max Breakdown Voltage

50V

Max Collector Current

100mA