DTB143ECT116

Teknik Özellikler

Parça Durumu

Active

JESD-609 Kodu

e1

RoHS Durumu

ROHS3 Compliant

Number Of Elements

1

Tepe Reflow Sıcaklığı (°C)

260

Frequency Transition

200MHz

Max Collector Current

500mA

Transistor Type

PNP - Pre-Biased

Jesd30 Code

R-PDSO-G3

Ambalaj

Tape & Reel (TR)

Configuration

SINGLE WITH BUILT-IN RESISTOR

Montaj

Surface Mount

ECCN Kodu

EAR99

Additional Feature

BUILT-IN BIAS RESISTOR RATIO IS 1

Vcesatmax

0.3 V

Terminal Kaplaması

Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)

Terminal Sayısı

3

HTS Kodu

8541.21.00.75

Resistor Base R1

4.7 k Ω

Tepe Reflow Süresi (maks. sn)

10

Transistor Application

SWITCHING

Fabrika Tedarik Süresi

13 Weeks

Qualification Status

Not Qualified

Vce Saturation Max Ib Ic

300mV @ 2.5mA, 50mA

Collector Emitter Voltage Vceo

300mV

Power Max

200mW

Operating Temperature Max

150°C

Resistor Emitter Base R2

4.7 k Ω

Kılıf / Paket

TO-236-3, SC-59, SOT-23-3

Terminal Pozisyonu

DUAL

Dc Current Gain Hfe Min Ic Vce

47 @ 50mA 5V

Current Collector Cutoff Max

500nA

Pin Sayısı

3

Transistor Element Material

SILICON

Max Power Dissipation

200mW

Max Breakdown Voltage

50V

Collectoremitter Breakdown Voltage

50V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Montaj Tipi

Surface Mount

Transition Frequency

200MHz