DTB123EKFRAT146

Teknik Özellikler

Configuration

SINGLE WITH BUILT-IN RESISTOR

ECCN Kodu

EAR99

Terminal Sayısı

3

Additional Feature

BUILT IN BIAS RESISTANCE RATIO IS 1

Resistor Base R1

2.2 k Ω

Vce Saturation Max Ib Ic

300mV @ 2.5mA, 50mA

Fabrika Tedarik Süresi

13 Weeks

Transistor Application

SWITCHING

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Yüzey Montaj

YES

Parça Durumu

Active

RoHS Durumu

ROHS3 Compliant

Number Of Elements

1

Frequency Transition

200MHz

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Transistor Type

PNP - Pre-Biased + Diode

Jesd30 Code

R-PDSO-G3

Seri

Automotive, AEC-Q101

Ambalaj

Cut Tape (CT)

Terminal Pozisyonu

DUAL

Transistor Element Material

SILICON

Dc Current Gain Hfe Min Ic Vce

39 @ 50mA 5V

Transition Frequency

200MHz

Polaritychannel Type

PNP

Montaj Tipi

Surface Mount

Currentcollector Ic Max

500mA

Nem Hassasiyeti (MSL)

1 (Unlimited)

Terminal Formu

GULL WING

Collectoremitter Voltagemax

50V

Power Max

200mW

Resistor Emitter Base R2

2.2 k Ω

Kılıf / Paket

TO-236-3, SC-59, SOT-23-3