DTB114GCT116

Teknik Özellikler

Parça Durumu

Active

RoHS Durumu

ROHS3 Compliant

Yayın Yılı

2016

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

REACH Uyumluluk Kodu

not_compliant

Frequency Transition

200MHz

Number Of Elements

1

Ambalaj

Tape & Reel (TR)

Jesd30 Code

R-PDSO-G3

Transistor Type

PNP - Pre-Biased

Max Collector Current

500mA

Configuration

SINGLE WITH BUILT-IN RESISTOR

Montaj

Surface Mount

Terminal Sayısı

3

Additional Feature

DIGITAL, BUILT-IN BIAS RESISTOR

ECCN Kodu

EAR99

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Transistor Application

SWITCHING

Fabrika Tedarik Süresi

13 Weeks

Vce Saturation Max Ib Ic

300mV @ 2.5mA, 50mA

Qualification Status

Not Qualified

Collector Emitter Voltage Vceo

300mV

Power Max

200mW

Kılıf / Paket

TO-236-3, SC-59, SOT-23-3

Resistor Emitter Base R2

10 k Ω

Terminal Pozisyonu

DUAL

Max Power Dissipation

200mW

Dc Current Gain Hfe Min Ic Vce

56 @ 50mA 5V

Current Collector Cutoff Max

500nA ICBO

Transistor Element Material

SILICON

Pin Sayısı

3

Max Breakdown Voltage

50V

Terminal Formu

GULL WING

Montaj Tipi

Surface Mount

Collectoremitter Breakdown Voltage

50V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Polaritychannel Type

PNP