DTB114ECT116

Teknik Özellikler

Resistor Emitter Base R2

10 k Ω

Kılıf / Paket

TO-236-3, SC-59, SOT-23-3

Power Max

200mW

Operating Temperature Max

150°C

Collector Emitter Voltage Vceo

300mV

Transition Frequency

200MHz

Polaritychannel Type

PNP

Nem Hassasiyeti (MSL)

1 (Unlimited)

Collectoremitter Breakdown Voltage

50V

Montaj Tipi

Surface Mount

Terminal Formu

GULL WING

Max Breakdown Voltage

50V

Transistor Element Material

SILICON

Pin Sayısı

3

Current Collector Cutoff Max

500nA

Dc Current Gain Hfe Min Ic Vce

56 @ 50mA 5V

Max Power Dissipation

200mW

Terminal Pozisyonu

DUAL

Max Collector Current

500mA

Transistor Type

PNP - Pre-Biased

Jesd30 Code

R-PDSO-G3

Ambalaj

Tape & Reel (TR)

Number Of Elements

1

Frequency Transition

200MHz

REACH Uyumluluk Kodu

not_compliant

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Yayın Yılı

2016

RoHS Durumu

ROHS3 Compliant

Parça Durumu

Active

Resistor Base R1

10 k Ω

HTS Kodu

8541.21.00.75

Vce Saturation Max Ib Ic

300mV @ 2.5mA, 50mA

Qualification Status

Not Qualified

Fabrika Tedarik Süresi

13 Weeks

Transistor Application

SWITCHING

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

ECCN Kodu

EAR99

Additional Feature

DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 1

Vcesatmax

0.3 V

Terminal Sayısı

3