DTB113ESTP

Teknik Özellikler

Maks. Çalışma Sıcaklığı

150°C

Number Of Elements

1

Tepe Reflow Sıcaklığı (°C)

260

Lead Free Status Rohs Status

Lead free / RoHS Compliant

Frequency Transition

200MHz

Ambalaj

Tape & Box (TB)

Tedarikçi Cihaz Paketi

SPT

JESD-609 Kodu

e1

Resistor Base R1

1 k Ω

HTS Kodu

8541.21.00.75

Tepe Reflow Süresi (maks. sn)

10

Transistor Application

SWITCHING

Vce Saturation Max Ib Ic

300mV @ 2.5mA, 50mA

Other Names

DTB113ESTP-ND DTB113ESTPTB

ECCN Kodu

EAR99

Additional Feature

BUILT IN BIAS RESISTOR RATIO IS 1

Terminal Sayısı

3

Voltage Rated Dc

-50V

Resistor Emitter Base R2

1 k Ω

Collector Emitter Voltage Vceo

300mV

Voltage Collector Emitter Breakdown Max

50V

Power Max

300mW

Max Breakdown Voltage

50V

Hfemin

33

Transition Frequency

200MHz

Current Collector Cutoff Max

500nA

Pin Sayısı

3

Jesd30 Code

R-PSIP-T3

Max Collector Current

500mA

Transistor Type

PNP - Pre-Biased

Parça Durumu

Obsolete

Element Configuration

Single

Yayın Yılı

2006

RoHS Durumu

ROHS3 Compliant

Akım Değeri

-500mA

Polarity

PNP

Qualification Status

Not Qualified

Montaj

Through Hole

Terminal Kaplaması

TIN SILVER COPPER

Vcesatmax

0.3 V