DTB113ECT116

Teknik Özellikler

Number Of Elements

1

Frequency Transition

200MHz

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

REACH Uyumluluk Kodu

not_compliant

Max Collector Current

500mA

Transistor Type

PNP - Pre-Biased

Jesd30 Code

R-PDSO-G3

Ambalaj

Tape & Reel (TR)

Parça Durumu

Active

Yayın Yılı

2015

RoHS Durumu

ROHS3 Compliant

HTS Kodu

8541.21.00.75

Resistor Base R1

1 k Ω

Transistor Application

SWITCHING

Fabrika Tedarik Süresi

13 Weeks

Qualification Status

Not Qualified

Vce Saturation Max Ib Ic

300mV @ 2.5mA, 50mA

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Montaj

Surface Mount

Configuration

SINGLE WITH BUILT-IN RESISTOR

ECCN Kodu

EAR99

Additional Feature

DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 1

Vcesatmax

0.3 V

Terminal Sayısı

3

Resistor Emitter Base R2

1 k Ω

Kılıf / Paket

TO-236-3, SC-59, SOT-23-3

Collector Emitter Voltage Vceo

300mV

Power Max

200mW

Operating Temperature Max

150°C

Max Breakdown Voltage

50V

Transition Frequency

200MHz

Polaritychannel Type

PNP

Montaj Tipi

Surface Mount

Collectoremitter Breakdown Voltage

50V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Terminal Formu

GULL WING

Terminal Pozisyonu

DUAL

Pin Sayısı

3

Transistor Element Material

SILICON

Dc Current Gain Hfe Min Ic Vce

33 @ 50mA 5V