DTB113ECHZGT116

Teknik Özellikler

Resistor Base R1

1 k Ω

Vce Saturation Max Ib Ic

300mV @ 2.5mA, 50mA

Fabrika Tedarik Süresi

8 Weeks

Transistor Application

SWITCHING

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

ECCN Kodu

EAR99

Terminal Sayısı

3

Additional Feature

BUILT IN BIAS RESISTANCE RATIO IS 1.0

Configuration

SINGLE WITH BUILT-IN RESISTOR

Transistor Type

PNP - Pre-Biased + Diode

Jesd30 Code

R-PDSO-G3

Ambalaj

Tape & Reel (TR)

Seri

Automotive, AEC-Q101

Number Of Elements

1

Frequency Transition

200MHz

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

RoHS Durumu

RoHS Compliant

Yüzey Montaj

YES

Parça Durumu

Active

Polaritychannel Type

PNP

Transition Frequency

200MHz

Montaj Tipi

Surface Mount

Currentcollector Ic Max

500mA

Nem Hassasiyeti (MSL)

1 (Unlimited)

Terminal Formu

GULL WING

Transistor Element Material

SILICON

Dc Current Gain Hfe Min Ic Vce

33 @ 50mA 5V

Current Collector Cutoff Max

500nA

Terminal Pozisyonu

DUAL

Resistor Emitter Base R2

1 k Ω

Kılıf / Paket

TO-236-3, SC-59, SOT-23-3

Power Max

200mW

Voltage Collector Emitter Breakdown Max

50V