DTA143XU3HZGT106

Teknik Özellikler

Power Max

200mW

Resistor Base R1

4.7 k Ω

Configuration

SINGLE WITH BUILT-IN RESISTOR

Vce Saturation Max Ib Ic

300mV @ 500μA, 10mA

Transistor Type

PNP - Pre-Biased

Nem Hassasiyeti (MSL)

1 (Unlimited)

Currentcollector Ic Max

100mA

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Transition Frequency

250MHz

Number Of Elements

1

Fabrika Tedarik Süresi

13 Weeks

Resistor Emitter Base R2

10 k Ω

Transistor Application

SWITCHING

Dc Current Gain Hfe Min Ic Vce

30 @ 10mA 5V

Terminal Pozisyonu

DUAL

Yüzey Montaj

YES

Voltage Collector Emitter Breakdown Max

50V

Current Collector Cutoff Max

500nA

Additional Feature

BUILT IN BIAS RESISTANCE RATIO IS 2.1

Jesd30 Code

R-PDSO-G3

Kılıf / Paket

SC-70, SOT-323

Montaj Tipi

Surface Mount

Ambalaj

Tape & Reel (TR)

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Terminal Sayısı

3

Terminal Formu

GULL WING

RoHS Durumu

ROHS3 Compliant

Transistor Element Material

SILICON

Polaritychannel Type

PNP

Frequency Transition

250MHz

Seri

Automotive, AEC-Q101

Parça Durumu

Active