DTA124XU3T106

Teknik Özellikler

Vce Saturation Max Ib Ic

300mV @ 500μA, 10mA

Configuration

SINGLE WITH BUILT-IN RESISTOR

Resistor Base R1

22 k Ω

Power Max

200mW

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Currentcollector Ic Max

100mA

Transistor Type

PNP - Pre-Biased

Nem Hassasiyeti (MSL)

1 (Unlimited)

Dc Current Gain Hfe Min Ic Vce

68 @ 5mA 5V

Transistor Application

SWITCHING

Resistor Emitter Base R2

47 k Ω

Number Of Elements

1

Fabrika Tedarik Süresi

13 Weeks

Transition Frequency

250MHz

Yüzey Montaj

YES

Terminal Pozisyonu

DUAL

Jesd30 Code

R-PDSO-G3

Additional Feature

BUILT IN BIAS RESISTANCE RATIO IS 2.1

Voltage Collector Emitter Breakdown Max

50V

Montaj Tipi

Surface Mount

Ambalaj

Tape & Reel (TR)

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Kılıf / Paket

SC-70, SOT-323

Transistor Element Material

SILICON

RoHS Durumu

ROHS3 Compliant

Terminal Formu

GULL WING

Terminal Sayısı

3

Parça Durumu

Active

Frequency Transition

250MHz

Polaritychannel Type

PNP