DTA123JKAT246

Teknik Özellikler

Configuration

SINGLE WITH BUILT-IN RESISTOR

Vce Saturation Max Ib Ic

300mV @ 250μA, 5mA

JESD-609 Kodu

e1

Resistor Base R1

2.2 k Ω

Power Max

200mW

Yayın Yılı

2001

Tepe Reflow Süresi (maks. sn)

10

ECCN Kodu

EAR99

Transistor Type

PNP - Pre-Biased

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Application

SWITCHING

Dc Current Gain Hfe Min Ic Vce

80 @ 10mA 5V

Max Power Dissipation

200mW

Resistor Emitter Base R2

47 k Ω

Collector Emitter Voltage Vceo

300mV

Number Of Elements

1

Transition Frequency

250MHz

Terminal Kaplaması

TIN SILVER COPPER

Collectoremitter Breakdown Voltage

50V

Terminal Pozisyonu

DUAL

Additional Feature

BUILT-IN BIAS RESISTOR RATIO IS 21

Jesd30 Code

R-PDSO-G3

Current Collector Cutoff Max

500nA

Operating Temperature Max

150°C

Montaj

Surface Mount

HTS Kodu

8541.21.00.75

Tepe Reflow Sıcaklığı (°C)

260

Ambalaj

Tape & Reel (TR)

Montaj Tipi

Surface Mount

Temel Parça No

DTA123

Kılıf / Paket

SOT-346

Vcesatmax

0.3 V

Transistor Element Material

SILICON

RoHS Durumu

ROHS3 Compliant

Terminal Formu

GULL WING

Max Collector Current

100mA

Pin Sayısı

3

Terminal Sayısı

3

Qualification Status

Not Qualified

Parça Durumu

Not For New Designs