DTA043XEBTL

Teknik Özellikler

Resistor Emitter Base R2

10 k Ω

RoHS Durumu

RoHS Compliant

Transistor Element Material

SILICON

Parça Durumu

Active

Polaritychannel Type

PNP

Vce Saturation Max Ib Ic

150mV @ 500μA, 5mA

Dc Current Gain Hfe Min Ic Vce

35 @ 5mA 10V

Transition Frequency

250MHz

Transistor Type

PNP - Pre-Biased + Diode

Resistor Base R1

4.7 k Ω

Frequency Transition

250MHz

Jesd30 Code

R-PDSO-F3

Number Of Elements

1

ECCN Kodu

EAR99

Currentcollector Ic Max

100mA

Fabrika Tedarik Süresi

8 Weeks

Voltage Collector Emitter Breakdown Max

50V

Kılıf / Paket

SC-89, SOT-490

Additional Feature

BUILT IN BIAS RESISTANCE RATIO IS 2.1

Terminal Pozisyonu

DUAL

Current Collector Cutoff Max

500nA

Ambalaj

Tape & Reel (TR)

Yüzey Montaj

YES

Terminal Sayısı

3

Configuration

SINGLE WITH BUILT-IN RESISTOR

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Application

SWITCHING

Terminal Formu

FLAT

Power Max

150mW

Montaj Tipi

Surface Mount