BSM180D12P3C007

Teknik Özellikler

Kılıf / Paket

Module

Fet Feature

Silicon Carbide (SiC)

ECCN Kodu

EAR99

Max Power Dissipation

880W

Ds Breakdown Voltagemin

1200V

Terminal Formu

UNSPECIFIED

Fet Type

2 N-Channel (Dual)

Case Connection

ISOLATED

Çalışma Sıcaklığı

175°C TJ

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Fabrika Tedarik Süresi

25 Weeks

REACH Uyumluluk Kodu

not_compliant

RoHS Durumu

ROHS3 Compliant

Ambalaj

Bulk

Input Capacitance Ciss Max Vds

900pF @ 10V

Terminal Sayısı

10

Nem Hassasiyeti (MSL)

1 (Unlimited)

Drain Currentmax Abs Id

180A

Vgsth Max Id

5.6V @ 50mA

Transistor Application

SWITCHING

Parça Durumu

Active

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Jesd30 Code

R-XUFM-X10

Current Continuous Drain Id25

180A Tc

Terminal Pozisyonu

UPPER

Montaj Tipi

Surface Mount

Yüzey Montaj

NO

Pulsed Drain Currentmax Idm

360A

Operating Mode

ENHANCEMENT MODE

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Drain To Source Voltage Vdss

1200V 1.2kV

Number Of Elements

2

Configuration

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE