BSM180D12P2C101

Teknik Özellikler

Yayın Yılı

2012

Terminal Formu

UNSPECIFIED

Gate To Source Voltage Vgs

22V

Kılıf / Paket

Module

Fet Feature

Silicon Carbide (SiC)

Max Power Dissipation

1.13kW

Number Of Channels

1

Nominal Vgs

2.7 V

Reach Svhc

No SVHC

RoHS Durumu

ROHS3 Compliant

Ambalaj

Bulk

Montaj

Screw

Yükseklik

21.1mm

Input Capacitance Ciss Max Vds

23000pF @ 10V

Fet Type

2 N-Channel (Half Bridge)

Power Max

1130W

Case Connection

ISOLATED

Çalışma Sıcaklığı

-40°C~150°C TJ

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Fabrika Tedarik Süresi

25 Weeks

Continuous Drain Current Id

180A

REACH Uyumluluk Kodu

not_compliant

Genişlik

45.6mm

Threshold Voltage

2.7V

Vgsth Max Id

4V @ 35.2mA

Uzunluk

122mm

Transistor Application

SWITCHING

Parça Durumu

Active

Terminal Sayısı

8

Nem Hassasiyeti (MSL)

1 (Unlimited)

Pin Sayısı

10

Operating Mode

ENHANCEMENT MODE

Pulsed Drain Currentmax Idm

360A

Number Of Elements

2

Drain To Source Voltage Vdss

1200V 1.2kV

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Configuration

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Current Continuous Drain Id25

204A Tc

Jesd30 Code

R-XUFM-X8