2SCR583D3FRATL

Teknik Özellikler

Collectoremitter Saturation Voltage

160 mV

Çalışma Sıcaklığı

150°C (TJ)

Power Max

10 W

Configuration

Single

Dc Collectorbase Gain Hfe Min

180 at 1 A, 3 V

Transistor Polarity

NPN

Transistor Type

NPN

Montaj Stili

SMD/SMT

Continuous Collector Current

7 A

Maximum Collector Emitter Voltage

50 V

Voltage Collector Emitter Breakdown Max

50 V

Fabrika Paket Adedi

2500

Package Type

TO-252 (DPAK)

Ürün Durumu

Active

RoHS

Details

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Currentcollector Ic Max

7 A

Technology

Si

Dc Current Gain Hfe Max

450 at 1 A, 3 V

Frequency Transition

280MHz

Collector Emitter Voltage Vceo Max

50 V

Collector Base Voltage Vcbo

50 V

Pd Power Dissipation

10 W

Current Collector Cutoff Max

1μA (ICBO)

Number Of Elements Per Chip

1

Tedarikçi Cihaz Paketi

TO-252

Emitter Base Voltage Vebo

6 V

Vce Saturation Max Ib Ic

350mV @ 150mA, 3A

Maks. Çalışma Sıcaklığı

+ 150 C

Ürün Tipi

BJTs - Bipolar Transistors

Montaj Tipi

Surface Mount

Ambalaj

MouseReel

Maximum Dc Collector Current

7 A

Dc Current Gain Hfe Min Ic Vce

180 @ 1A, 3V