Fiyat için teklif alın
Adet ve teslim süresine göre fiyatlandırılır.
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Current Collector Cutoff Max
- 1μA (ICBO)
- Collector Base Voltage Vcbo
- 120 V
- Pd Power Dissipation
- 500 mW
- Maks. Çalışma Sıcaklığı
- + 150 C
- Vce Saturation Max Ib Ic
- 300mV @ 80mA, 800mA
- Emitter Base Voltage Vebo
- 6 V
- Tedarikçi Cihaz Paketi
- SOT-89
- Maximum Dc Collector Current
- 1.5 A
- Dc Current Gain Hfe Min Ic Vce
- 120 @ 200mA, 5V
- Montaj Tipi
- Surface Mount
- Ürün Tipi
- BJTs - Bipolar Transistors
- Ambalaj
- Cut Tape
- Technology
- Si
- Dc Current Gain Hfe Max
- 390 at 0.2 A, 5 V
- Currentcollector Ic Max
- 1.5 A
- Ürün Durumu
- Active
- Kılıf / Paket
- TO-243AA
- RoHS
- Details
- Collector Emitter Voltage Vceo Max
- 120 V
- Frequency Transition
- 200MHz
- Montaj Stili
- SMD/SMT
- Power Dissipation
- 2W
- Transistor Polarity
- NPN
- Gain Bandwidth Product Ft
- 200 MHz
- Transistor Type
- NPN
- Voltage Collector Emitter Breakdown Max
- 120 V
- Fabrika Paket Adedi
- 1000
- Continuous Collector Current
- 1.5A
- Transition Frequency
- 200MHz
- Qualification
- AEC-Q101
- Msl
- MSL 1 - Unlimited
- Power Max
- 500 mW
- Configuration
- Single
- Dc Collectorbase Gain Hfe Min
- 120 at 0.2 A, 5 V
- Çalışma Sıcaklığı
- 150°C (TJ)
- Collectoremitter Saturation Voltage
- 100 mV
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