SSD2025TF

Teknik Özellikler

Operating Mode

ENHANCEMENT MODE

Çalışma Sıcaklığı

-55°C~150°C TJ

Yüzey Montaj

YES

Jesd30 Code

R-PDSO-G8

Transistor Application

SWITCHING

Rds On Max Id Vgs

100m Ω @ 3.3A, 10V

Gate Charge Qg Max Vgs

30nC @ 10V

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Current Continuous Drain Id25

3.3A

Qualification Status

COMMERCIAL

Drain To Source Voltage Vdss

60V

Transistor Element Material

SILICON

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Gate To Source Voltage Vgs

20V

JESD-609 Kodu

e0

Number Of Elements

2

Drain To Source Breakdown Voltage

60V

Montaj Tipi

Surface Mount

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Power Dissipation

2W

Power Max

2W

Fabrika Tedarik Süresi

48 Weeks

Tepe Reflow Sıcaklığı (°C)

260

Terminal Sayısı

8

Ds Breakdown Voltagemin

60V

Max Power Dissipation

2W

Rise Time

18ns

Pin Sayısı

8

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Pulsed Drain Currentmax Idm

10A

RoHS Durumu

Non-RoHS Compliant

Akım Değeri

3A

Terminal Formu

GULL WING

Fet Feature

Logic Level Gate

Vgsth Max Id

1V @ 250μA

Montaj

Surface Mount

Drainsource On Resistancemax

0.1Ohm

Fall Time Typ

23 ns

Ambalaj

Tape & Reel (TR)

Pin Sayısı

8