PDTA143EE,115

Teknik Özellikler

Nem Hassasiyeti (MSL)

1 (Unlimited)

Tepe Reflow Sıcaklığı (°C)

260

Resistor Base R1

4.7 kOhms

Transistor Element Material

SILICON

Configuration

SINGLE WITH BUILT-IN RESISTOR

Currentcollector Ic Max

100mA

Terminal Pozisyonu

DUAL

Terminal Kaplaması

Tin (Sn)

Terminal Formu

GULL WING

Qualification Status

Not Qualified

Transistor Application

SWITCHING

Tedarikçi Cihaz Paketi

SC-75

Jesd30 Code

R-PDSO-G3

Voltage Collector Emitter Breakdown Max

50V

Power Dissipationmax Abs

0.15W

RoHS Durumu

ROHS3 Compliant

Polaritychannel Type

PNP

Operating Temperature Max

150°C

Power Max

150mW

Tepe Reflow Süresi (maks. sn)

40

Yayın Yılı

2011

Vce Saturation Max Ib Ic

150mV @ 500μA, 10mA

Parça Durumu

Obsolete

Number Of Elements

1

ECCN Kodu

EAR99

Ambalaj

Tape & Reel (TR)

Terminal Sayısı

3

Montaj Tipi

Surface Mount

JESD-609 Kodu

e3

Yüzey Montaj

YES

Kılıf / Paket

SC-75, SOT-416

Additional Feature

BUILT-IN BIAS RESISTOR RATIO IS 1

Transistor Type

PNP - Pre-Biased

Temel Parça No

PDTA143

Dc Current Gain Hfe Min Ic Vce

30 @ 10mA 5V

Resistor Emitter Base R2

4.7 kOhms

Pin Sayısı

3

Current Collector Cutoff Max

1μA