NTMD3N08LR2

Teknik Özellikler

Additional Feature

ULTRA-LOW RESISTANCE

JESD-609 Kodu

e0

Ambalaj

Tape & Reel (TR)

Drainsource On Resistancemax

0.215Ohm

Configuration

SINGLE WITH BUILT-IN DIODE

Drain To Source Voltage Vdss

80V

Transistor Element Material

SILICON

Vgsth Max Id

3V @ 250μA

Qualification Status

COMMERCIAL

Fet Feature

Logic Level Gate

Terminal Formu

GULL WING

RoHS Durumu

Non-RoHS Compliant

Pulsed Drain Currentmax Idm

25A

Tepe Reflow Süresi (maks. sn)

30

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Current Continuous Drain Id25

2.3A

Gate Charge Qg Max Vgs

15nC @ 10V

Pin Sayısı

8

Rds On Max Id Vgs

215m Ω @ 2.5A, 10V

Jesd30 Code

R-PDSO-G8

Transistor Application

SWITCHING

Ds Breakdown Voltagemin

80V

Terminal Sayısı

8

Yüzey Montaj

YES

Tepe Reflow Sıcaklığı (°C)

240

Operating Mode

ENHANCEMENT MODE

Power Max

3.1W

Nem Hassasiyeti (MSL)

1 (Unlimited)

Parça Durumu

Obsolete

Kurşunsuz Kodu

no

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Input Capacitance Ciss Max Vds

480pF @ 25V

Terminal Kaplaması

TIN LEAD

Montaj Tipi

Surface Mount

Avalanche Energy Rating Eas

25 mJ

Fet Type

2 N-Channel (Dual)

Drain Currentmax Abs Id

2.3A

Number Of Elements

1