NTLJD2104PTAG

Teknik Özellikler

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Terminal Sayısı

6

Element Configuration

Dual

Drain To Source Breakdown Voltage

-12V

Operating Mode

ENHANCEMENT MODE

JESD-609 Kodu

e3

Yüzey Montaj

YES

Yayın Yılı

2008

Kurşunsuz Kodu

yes

Kılıf / Paket

6-WDFN Exposed Pad

Rise Time

12.3ns

Transistor Application

SWITCHING

Terminal Formu

NO LEAD

Drainsource On Resistancemax

0.12Ohm

Power Max

700mW

Pin Sayısı

6

Gate Charge Qg Max Vgs

8nC @ 4.5V

Pin Sayısı

6

Terminal Kaplaması

MATTE TIN

Transistor Element Material

SILICON

Montaj

Surface Mount

Fet Feature

Logic Level Gate

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Continuous Drain Current Id

2.4A

Current Continuous Drain Id25

2.4A

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Vgsth Max Id

800mV @ 250μA

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Ds Breakdown Voltagemin

12V

Case Connection

DRAIN

Drain To Source Voltage Vdss

12V

Jesd30 Code

S-XDSO-N6

Montaj Tipi

Surface Mount

Turn Off Delay Time

14 ns

Qualification Status

COMMERCIAL

Fet Type

2 P-Channel (Dual)

Input Capacitance Ciss Max Vds

467pF @ 6V

Lead Free Status Rohs Status

Lead free / RoHS Compliant

RoHS Durumu

ROHS3 Compliant

Fall Time Typ

16.2 ns