NTHD5903T1G

Teknik Özellikler

Gate Charge Qg Max Vgs

7.4nC @ 4.5V

Montaj Tipi

Surface Mount

Max Power Dissipation

1.1W

Temel Parça No

NTHD5903

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Power Max

1.1W

Number Of Elements

2

Terminal Sayısı

8

Voltage Rated Dc

-20V

Uzunluk

6.35mm

Vgsth Max Id

600mV @ 250μA

Lifecycle Status

OBSOLETE (Last Updated: 1 week ago)

Fet Feature

Logic Level Gate

Drainsource On Resistancemax

0.155Ohm

Rise Time

35ns

Kurşunsuz

Lead Free

Drain To Source Voltage Vdss

20V

Pin Sayısı

8

Montaj

Surface Mount

Kılıf / Paket

8-SMD, Flat Lead

Qualification Status

COMMERCIAL

Tepe Reflow Sıcaklığı (°C)

260

Pin Sayısı

8

Kurşunsuz Kodu

no

Power Dissipation

1.1W

Tepe Reflow Süresi (maks. sn)

40

Rds On Max Id Vgs

155m Ω @ 2.2A, 4.5V

Drain To Source Breakdown Voltage

-20V

Additional Feature

LOGIC LEVEL COMPATIBLE

Genişlik

6.35mm

Ambalaj

Tape & Reel (TR)

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Transistor Element Material

SILICON

Yayın Yılı

2005

Transistor Application

SWITCHING

Terminal Formu

C BEND

Operating Mode

ENHANCEMENT MODE

Jesd30 Code

R-XDSO-C8

RoHS Durumu

ROHS3 Compliant

Yükseklik

6.35mm