NSM21356DW6T1G

Teknik Özellikler

Lifecycle Status

LAST SHIPMENTS (Last Updated: 2 days ago)

Kılıf / Paket

6-TSSOP, SC-88, SOT-363

Parça Durumu

Obsolete

Jesd30 Code

R-PDSO-G6

Current Collector Cutoff Max

500nA

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Kurşunsuz

Lead Free

Pin Sayısı

6

Additional Feature

BUILT IN BIAS RESISTOR RATIO IS 1

Terminal Formu

GULL WING

Resistor Base R1

47k Ω

Pin Sayısı

6

Collector Emitter Voltage Vceo

250mV

Polaritychannel Type

NPN AND PNP

Number Of Elements

2

Voltage Collector Emitter Breakdown Max

50V 65V

Collectoremitter Breakdown Voltage

65V

HTS Kodu

8541.21.00.95

Qualification Status

COMMERCIAL

JESD-609 Kodu

e3

Currentcollector Ic Max

100mA

Transistor Type

1 NPN Pre-Biased, 1 PNP

Max Power Dissipation

230mW

Terminal Kaplaması

TIN

Terminal Pozisyonu

DUAL

Kurşunsuz Kodu

yes

Transistor Application

SWITCHING

Dc Current Gain Hfe Min Ic Vce

80 @ 5mA 10V / 220 @ 2mA 5V

Max Collector Current

100mA

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Terminal Sayısı

6

Montaj

Surface Mount

Yayın Yılı

2008

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Element Material

SILICON

Power Max

230mW

ECCN Kodu

EAR99

Resistor Emitter Base R2

47k Ω

Vce Saturation Max Ib Ic

250mV @ 300μA, 10mA / 650mV @ 5mA, 100mA