NSBA113EDXV6T1

Teknik Özellikler

Terminal Formu

FLAT

Dc Current Gain Hfe Min Ic Vce

3 @ 5mA 10V

Max Power Dissipation

500mW

Vce Saturation Max Ib Ic

250mV @ 5mA, 10mA

Additional Feature

BUILT IN BIAS RESISTOR RATIO IS 1

Terminal Kaplaması

MATTE TIN

Currentcollector Ic Max

100mA

RoHS Durumu

ROHS3 Compliant

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Ambalaj

Tape & Reel (TR)

Resistor Base R1

1k Ω

Voltage Collector Emitter Breakdown Max

50V

Max Collector Current

100mA

ECCN Kodu

EAR99

Tepe Reflow Süresi (maks. sn)

40

Montaj

Surface Mount

Kurşunsuz

Contains Lead

Temel Parça No

NSBA1*

Polaritychannel Type

PNP

Transistor Application

SWITCHING

Number Of Elements

2

Terminal Sayısı

6

Collectoremitter Breakdown Voltage

50V

Power Max

500mW

Pin Sayısı

6

Kurşunsuz Kodu

yes

Montaj Tipi

Surface Mount

Collector Emitter Voltage Vceo

250mV

Yüzey Montaj

YES

Parça Durumu

Obsolete

Resistor Emitter Base R2

1k Ω

Nem Hassasiyeti (MSL)

1 (Unlimited)

Kılıf / Paket

SOT-563, SOT-666

JESD-609 Kodu

e3

Jesd30 Code

R-PDSO-F6

Akım Değeri

-100mA

Qualification Status

COMMERCIAL

Current Collector Cutoff Max

500nA

Transistor Type

2 PNP - Pre-Biased (Dual)

Yayın Yılı

2005