NSB13211DW6T1G

Teknik Özellikler

Voltage Collector Emitter Breakdown Max

50V

Resistor Base R1

4.7k Ω, 10k Ω

Ambalaj

Tape & Reel (TR)

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

RoHS Durumu

ROHS3 Compliant

Pin Sayısı

6

Currentcollector Ic Max

100mA

Terminal Kaplaması

TIN

Additional Feature

BUILT IN BIAS RESISTANCE RATIO IS 1

Vce Saturation Max Ib Ic

250mV @ 300μA, 10mA / 250mV @ 1mA, 10mA

Max Power Dissipation

230mW

Dc Current Gain Hfe Min Ic Vce

35 @ 5mA 10V / 15 @ 5mA 10V

Terminal Formu

GULL WING

Polaritychannel Type

NPN AND PNP

Kurşunsuz

Lead Free

Montaj

Surface Mount

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

HTS Kodu

8541.21.00.95

ECCN Kodu

EAR99

Max Collector Current

100mA

Resistor Emitter Base R2

4.7k Ω, 10k Ω

REACH Uyumluluk Kodu

unknown

Parça Durumu

Obsolete

Yüzey Montaj

YES

Collector Emitter Voltage Vceo

250mV

Montaj Tipi

Surface Mount

Kurşunsuz Kodu

yes

Pin Sayısı

6

Power Max

230mW

Collectoremitter Breakdown Voltage

50V

Terminal Sayısı

6

Number Of Elements

2

Transistor Application

SWITCHING

Transistor Element Material

SILICON

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Transistor Type

1 NPN, 1 PNP - Pre-Biased (Dual)

Yayın Yılı

2008

Current Collector Cutoff Max

500nA

Qualification Status

COMMERCIAL

Jesd30 Code

R-PDSO-G6