NE3517S03-T1D-A

Teknik Özellikler

Kurşunsuz Kodu

Yes

Nem Hassasiyeti (MSL)

1 (Unlimited)

Package Body Material

PLASTIC/EPOXY

Package Style

MICROWAVE

Power Dissipationmax Abs

0.165 W

Fet Technology

HETERO-JUNCTION

Transistor Type

HFET

Transistor Application

AMPLIFIER

Nominal Gerilim

4V

Part Life Cycle Code

Obsolete

Voltage Test

2V

Reflow Temperaturemax S

NOT SPECIFIED

ECCN Kodu

EAR99

Drain Currentmax Id

0.015 A

Operating Mode

DEPLETION MODE

Ürün Durumu

Obsolete

Ambalaj

Tape & Reel (TR)

Frekans

20GHz

Configuration

SINGLE

Qualification Status

Not Qualified

Polaritychannel Type

N-CHANNEL

Risk Rank

5.79

RoHS Durumu

ROHS3 Compliant

Pin Sayısı

4

Current Test

10mA

Highest Frequency Band

K BAND

Ihs Manufacturer

RENESAS ELECTRONICS CORP

Package Description

MICROWAVE, R-PXMW-F4

Number Of Elements

1

Üretici Parça No

NE3517S03-T1D-A

Jesd30 Code

R-PXMW-F4

Paket

Bulk

Parça Durumu

Obsolete

Terminal Pozisyonu

UNSPECIFIED

Tedarikçi Cihaz Paketi

S03

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Package Shape

RECTANGULAR

Rohs Code

Yes

Ds Breakdown Voltagemin

3 V

Kılıf / Paket

4-SMD, Flat Leads