NE3512S02-T1D-A

Teknik Özellikler

Number Of Elements

1

Operating Temperature Max

125°C

Additional Feature

LOW NOISE

Kurşunsuz Kodu

yes

Nem Hassasiyeti (MSL)

1 (Unlimited)

Jesd30 Code

R-PQMW-F4

Transistor Type

HFET

Power Dissipationmax Abs

0.165W

Fet Technology

HETERO-JUNCTION

Terminal Pozisyonu

QUAD

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

JESD-609 Kodu

e6

Transistor Application

AMPLIFIER

Parça Durumu

Obsolete

Tedarikçi Cihaz Paketi

S02

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Nominal Gerilim

4V

Voltage Test

2V

Terminal Kaplaması

Tin/Bismuth (Sn/Bi)

Drain Currentmax Abs Id

0.015A

ECCN Kodu

EAR99

Kılıf / Paket

4-SMD, Flat Leads

Number Of Terminals

4

Ambalaj

Tape & Reel (TR)

Operating Mode

DEPLETION MODE

Ds Breakdown Voltagemin

3V

Terminal Formu

FLAT

Yüzey Montaj

YES

Current Rating Amps

70mA

Transistor Element Material

SILICON

Frekans

12GHz

Configuration

SINGLE

Polaritychannel Type

N-CHANNEL

Fabrika Tedarik Süresi

[object Object]

Qualification Status

Not Qualified

Gain

13.5dB

Highest Frequency Band

KU B

Current Test

10mA

Power Gainmin Gp

12.5dB

RoHS Durumu

ROHS3 Compliant