MUN5214T1

Teknik Özellikler

Max Power Dissipation

202mW

Terminal Pozisyonu

DUAL

Lead Free Status Rohs Status

Contains lead / RoHS non-compliant

Additional Feature

BUILT IN BIAS RESISTOR RATIO 4.7

Element Configuration

Single

Maks. Çalışma Sıcaklığı

150°C

Tepe Reflow Sıcaklığı (°C)

240

Tepe Reflow Süresi (maks. sn)

30

Resistor Base R1

10 k Ω

Transistor Application

SWITCHING

REACH Uyumluluk Kodu

unknown

RoHS Durumu

Non-RoHS Compliant

Qualification Status

COMMERCIAL

Resistor Emitter Base R2

47 k Ω

Terminal Formu

GULL WING

Kurşunsuz

Contains Lead

Transistor Element Material

SILICON

Kılıf / Paket

SC-70, SOT-323

Pin Sayısı

3

Voltage Rated Dc

50V

Configuration

SINGLE WITH BUILT-IN RESISTOR

Vce Saturation Max Ib Ic

250mV @ 300μA, 10mA

Other Names

MUN5214T1OSTR

Kurşunsuz Kodu

yes

Terminal Sayısı

3

Max Collector Current

100mA

Yayın Yılı

2006

Pin Sayısı

3

Jesd30 Code

R-PDSO-G3

HTS Kodu

8541.21.00.95

Ambalaj

Tape & Reel (TR)

Max Breakdown Voltage

50V

Current Collector Cutoff Max

500nA

Polaritychannel Type

NPN

Parça Durumu

Obsolete

Collector Emitter Voltage Vceo

50V

Polarity

NPN

Number Of Elements

1

Hfemin

80

Power Dissipation

202mW