MUN5211T1

Teknik Özellikler

Kurşunsuz Kodu

no

Resistor Base R1

10 k Ω

Qualification Status

COMMERCIAL

Transistor Application

SWITCHING

Nem Hassasiyeti (MSL)

1 (Unlimited)

Vce Saturation Max Ib Ic

250mV @ 300μA, 10mA

Pin Sayısı

3

JESD-609 Kodu

e0

Tepe Reflow Süresi (maks. sn)

30

Dc Current Gain Hfe Min Ic Vce

35 @ 5mA 10V

Ambalaj

Tape & Reel (TR)

Current Collector Cutoff Max

500nA

Terminal Sayısı

3

Transistor Type

NPN - Pre-Biased

Configuration

SINGLE WITH BUILT-IN RESISTOR

Polaritychannel Type

NPN

Additional Feature

BUILT IN BIAS RESISTOR RATIO 1

Power Max

310mW

Terminal Formu

GULL WING

Transistor Element Material

SILICON

Kılıf / Paket

SC-70, SOT-323

Terminal Kaplaması

TIN LEAD

Jesd30 Code

R-PDSO-G3

Resistor Emitter Base R2

10 k Ω

Voltage Collector Emitter Breakdown Max

50V

Tepe Reflow Sıcaklığı (°C)

240

Montaj Tipi

Surface Mount

Number Of Elements

1

Terminal Pozisyonu

DUAL

Parça Durumu

Obsolete

Currentcollector Ic Max

100mA

RoHS Durumu

Non-RoHS Compliant

Yüzey Montaj

YES