IRFD223

Teknik Özellikler

Number Of Terminals

3

Operating Temperaturemax

150 °C

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Power Dissipationmax Abs

1 W

Terminal Pozisyonu

DUAL

Transistor Application

SWITCHING

Rohs Code

No

Number Of Elements

1

Drainsource On Resistancemax

1.2 Ω

Package Shape

RECTANGULAR

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

REACH Uyumluluk Kodu

unknown

Package Description

IN-LINE, R-PDIP-T3

Part Life Cycle Code

Active

Package Style

IN-LINE

Configuration

SINGLE WITH BUILT-IN DIODE

Transistor Element Material

SILICON

JESD-609 Kodu

e0

Ihs Manufacturer

ROCHESTER ELECTRONICS LLC

Package Body Material

PLASTIC/EPOXY

Jesd30 Code

R-PDIP-T3

Kurşunsuz Kodu

No

Drain Currentmax Id

0.7 A

Yüzey Montaj

NO

Qualification Status

COMMERCIAL

Terminal Kaplaması

TIN LEAD

Ds Breakdown Voltagemin

150 V

ECCN Kodu

EAR99

Terminal Formu

THROUGH-HOLE

Operating Mode

ENHANCEMENT MODE

Polaritychannel Type

N-CHANNEL