IRF636

Teknik Özellikler

Ihs Manufacturer

ROCHESTER ELECTRONICS LLC

Power Dissipationmax Abs

75 W

Operating Temperaturemax

150 °C

Transistor Element Material

SILICON

ECCN Kodu

EAR99

Transistor Application

SWITCHING

Package Body Material

PLASTIC/EPOXY

Jesd30 Code

R-PSFM-T3

Jedec95 Code

TO-220AB

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Avalanche Energy Rating Eas

180 mJ

Part Life Cycle Code

Active

Terminal Formu

THROUGH-HOLE

Rohs Code

No

Number Of Elements

1

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Turnon Timemax Ton

49 ns

JESD-609 Kodu

e0

Configuration

SINGLE WITH BUILT-IN DIODE

HTS Kodu

8541.29.00.95

REACH Uyumluluk Kodu

unknown

Terminal Pozisyonu

SINGLE

Package Style

FLANGE MOUNT

Kurşunsuz Kodu

No

Terminal Kaplaması

TIN LEAD

Case Connection

DRAIN

Yüzey Montaj

NO

Polaritychannel Type

N-CHANNEL

Package Description

FLANGE MOUNT, R-PSFM-T3

Number Of Terminals

3

Pulsed Drain Currentmax Idm

32 A

Package Shape

RECTANGULAR

Qualification Status

COMMERCIAL

Turnoff Timemax Toff

76 ns

Drainsource On Resistancemax

0.45 Ω

Drain Currentmax Id

8.1 A

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Ds Breakdown Voltagemin

275 V

Power Dissipation Ambientmax

75 W

Operating Mode

ENHANCEMENT MODE