BSL806NL6327HTSA1

Teknik Özellikler

Turn Off Delay Time

12 ns

Operating Mode

ENHANCEMENT MODE

Montaj

Surface Mount

Vgsth Max Id

750mV @ 11μA

Fet Type

2 N-Channel (Dual)

Transistor Element Material

SILICON

Max Power Dissipation

500mW

Fet Feature

Logic Level Gate

Additional Feature

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Drain To Source Voltage Vdss

20V

Gate To Source Voltage Vgs

8V

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Temel Parça No

BSL806

Feedback Capmax Crss

28.6 pF

Ambalaj

Tape & Reel (TR)

Kurşunsuz Kodu

yes

Çalışma Sıcaklığı

-55°C~150°C TJ

Drainsource On Resistancemax

0.057Ohm

Fall Time Typ

3.7 ns

Ds Breakdown Voltagemin

20V

Radyasyon Dayanımı

No

RoHS Durumu

ROHS3 Compliant

Terminal Sayısı

6

Parça Durumu

Obsolete

Montaj Tipi

Surface Mount

Rise Time

9.9ns

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Seri

OptiMOS™

Power Max

500mW

Terminal Formu

GULL WING

Gate Charge Qg Max Vgs

1.7nC @ 2.5V

Pin Sayısı

6

ECCN Kodu

EAR99

Kılıf / Paket

SOT-23-6 Thin, TSOT-23-6

Tedarikçi Cihaz Paketi

PG-TSOP-6-6

Number Of Elements

2

Turn On Delay Time

7.5 ns

Jesd30 Code

R-PDSO-G6

Current Continuous Drain Id25

2.3A

Input Capacitance Ciss Max Vds

259pF @ 10V