BC848CDXV6T1G

Teknik Özellikler

Power Max

500mW

Current Collector Cutoff Max

15nA ICBO

Transistor Application

AMPLIFIER

Gain Bandwidth Product

100MHz

Temel Parça No

BC847CD

Transistor Element Material

SILICON

Collectoremitter Saturation Voltage

600mV

Collectoremitter Breakdown Voltage

30V

Frequency Transition

100MHz

Collector Base Voltage Vcbo

30V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Kurşunsuz

Lead Free

Qualification Status

COMMERCIAL

Transistor Type

2 NPN (Dual)

Ambalaj

Tape & Reel (TR)

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Number Of Elements

2

Parça Durumu

Obsolete

JESD-609 Kodu

e3

Kılıf / Paket

SOT-563, SOT-666

Yayın Yılı

2009

Voltage Rated Dc

30V

Akım Değeri

100mA

Yüzey Montaj

YES

Kurşunsuz Kodu

yes

Max Collector Current

100mA

Jesd30 Code

R-PDSO-F6

Vce Saturation Max Ib Ic

600mV @ 5mA, 100mA

Terminal Formu

FLAT

Voltage Collector Emitter Breakdown Max

30V

ECCN Kodu

EAR99

Max Power Dissipation

500mW

Emitter Base Voltage Vebo

5V

Polarity

NPN

Configuration

SEPARATE, 2 ELEMENTS

Currentcollector Ic Max

100mA

Çalışma Sıcaklığı

-55°C~150°C TJ

Dc Current Gain Hfe Min Ic Vce

420 @ 2mA 5V

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Montaj

Surface Mount