Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Dc Current Gain Hfe Min Ic Vce
- 40 @ 150mA 2V
- Kılıf / Paket
- TO-226-3, TO-92-3 (TO-226AA)
- Max Collector Current
- 500mA
- Currentcollector Ic Max
- 500mA
- Power Max
- 625mW
- Vce Saturation Max Ib Ic
- 500mV @ 50mA, 500mA
- Terminal
- Through Hole
- Ambalaj
- Bulk
- Contact Plating
- Tin
- Terminal Kaplaması
- TIN LEAD
- Tepe Reflow Süresi (maks. sn)
- 30
- Frekans
- 100MHz
- Hfemin
- 25
- Emitter Base Voltage Vebo
- 5V
- Reach Svhc
- No SVHC
- Kurşunsuz Kodu
- no
- Number Of Elements
- 1
- Power Dissipation
- 1W
- Akım
- 1A
- Transistor Application
- SWITCHING
- Voltage Rated Dc
- -80V
- Yüzey Montaj
- NO
- Gain Bandwidth Product
- 150MHz
- Terminal Pozisyonu
- BOTTOM
- Montaj
- Through Hole
- Collector Emitter Voltage Vceo
- 80V
- Terminal Sayısı
- 3
- Weight
- 200.998119mg
- JESD-609 Kodu
- e0
- Pin Sayısı
- 3
- Qualification Status
- COMMERCIAL
- Current Collector Cutoff Max
- 100nA ICBO
- Tepe Reflow Sıcaklığı (°C)
- 240
- Transistor Element Material
- SILICON
- Polaritychannel Type
- PNP
- Max Power Dissipation
- 625mW
- Frequency Transition
- 150MHz
- Yayın Yılı
- 2005
- Voltage Collector Emitter Breakdown Max
- 80V
- Lifecycle Status
- OBSOLETE (Last Updated: 3 days ago)
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