H7N0311LS

Teknik Özellikler

Ihs Manufacturer

RENESAS ELECTRONICS CORP

Qualification Status

Not Qualified

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Polaritychannel Type

N-CHANNEL

Ds Breakdown Voltagemin

30 V

Drainsource On Resistancemax

0.016 Ω

Part Life Cycle Code

Transferred

Operating Mode

ENHANCEMENT MODE

REACH Uyumluluk Kodu

unknown

Terminal Pozisyonu

SINGLE

Transistor Element Material

SILICON

Yüzey Montaj

YES

Case Connection

DRAIN

Jesd30 Code

R-PSSO-G2

Package Body Material

PLASTIC/EPOXY

Transistor Application

SWITCHING

Package Description

SMALL OUTLINE, R-PSSO-G2

Package Style

SMALL OUTLINE

Pulsed Drain Currentmax Idm

180 A

Pin Sayısı

3

Terminal Formu

GULL WING

ECCN Kodu

EAR99

Package Shape

RECTANGULAR

Drain Currentmax Id

45 A

Configuration

SINGLE WITH BUILT-IN DIODE

Number Of Terminals

2

Number Of Elements

1