Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Voltage Collector Emitter Breakdown Max
- 650 V
- Currentcollector Ic Max
- 100 A
- Vceon Max Vge Ic
- 2V @ 15V, 50A
- Ambalaj
- Tube
- Continuous Collector Current Ic Max
- 50 A
- Ürün Tipi
- IGBT Transistors
- Ürün Durumu
- Active
- Igbt Type
- Trench
- Çalışma Sıcaklığı
- 175°C (TJ)
- Maximum Gate Emitter Voltage
- - 20 V, + 20 V
- Technology
- Si
- RoHS
- Details
- Paket
- Tube
- Pd Power Dissipation
- 250 W
- Collector Emitter Voltage Vceo Max
- 650 V
- Montaj Stili
- Through Hole
- Giriş Tipi
- Standard
- Continuous Collector Current
- 100
- Td Onoff25c
- 20ns/93ns
- Test Conditions
- 400V, 50A, 16Ohm, 15V
- Power Dissipation
- 250
- Power Max
- 250 W
- Configuration
- Single
- Fabrika Paket Adedi
- 25
- Montaj Tipi
- Through Hole
- Gate Charge
- 36 nC
- Tedarikçi Cihaz Paketi
- TO-247A
- Continuous Collector Current At25 C
- 100 A
- Switching Energy
- 830μJ (on), 670μJ (off)
- Collectoremitter Saturation Voltage
- 1.5
- Reverse Recovery Time Trr
- 65 ns
- Maks. Çalışma Sıcaklığı
- + 175 C
- Kılıf / Paket
- TO-247-3
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