RBN40H65T1FPQ-A0#CB0

Teknik Özellikler

Power Max

185 W

Configuration

Single

Test Conditions

400V, 40A, 16Ohm, 15V

Td Onoff25c

22ns/96ns

Gate Charge

28 nC

Reverse Recovery Time Trr

55 ns

Collectoremitter Saturation Voltage

1.5 V

Kılıf / Paket

TO-247-3

Maks. Çalışma Sıcaklığı

+ 175 C

Continuous Collector Current At25 C

80 A

Tedarikçi Cihaz Paketi

TO-247A

Switching Energy

620μJ (on), 520μJ (off)

Montaj Tipi

Through Hole

Fabrika Paket Adedi

25

Continuous Collector Current Ic Max

40 A

Ürün Durumu

Active

Ürün Tipi

IGBT Transistors

Currentcollector Ic Max

80 A

Voltage Collector Emitter Breakdown Max

650 V

Ambalaj

Tube

Vceon Max Vge Ic

2V @ 15V, 40A

Montaj Stili

Through Hole

Collector Emitter Voltage Vceo Max

650 V

Giriş Tipi

Standard

RoHS

Details

Technology

Si

Maximum Gate Emitter Voltage

- 20 V, + 20 V

Çalışma Sıcaklığı

175°C (TJ)

Igbt Type

Trench

Paket

Tube

Pd Power Dissipation

185 W