NP29N04QUK-E1-AY

Teknik Özellikler

Rds On Max Id Vgs

10.1mOhm @ 15A, 10V

Montaj Stili

SMD/SMT

Gate Charge Qg Max Vgs

29nC @ 10V

Input Capacitance Ciss Max Vds

1500pF @ 25V

Maks. Çalışma Sıcaklığı

+ 175 C

Tedarikçi Cihaz Paketi

8-HSON (5x5.4)

Number Of Channels

1 Channel

Transistor Polarity

N-Channel

Current Continuous Drain Id25

30A (Tc)

Id Continuous Drain Current

30 A

Pd Power Dissipation

44 W

Fet Feature

Standard

Vds Drainsource Breakdown Voltage

40 V

Vgs Th Gatesource Threshold Voltage

4 V

Vgsth Max Id

4V @ 250μA

Montaj Tipi

Surface Mount

Power Max

1W (Ta), 44W (Tc)

Vgs Gatesource Voltage

- 20 V, + 20 V

Rds On Drainsource Resistance

10.1 mOhms

Çalışma Sıcaklığı

175°C

Qg Gate Charge

19 nC

Ürün Durumu

Active

Drain To Source Voltage Vdss

40V

Seri

Automotive, AEC-Q101

Channel Mode

Enhancement

Technology

Si

Kılıf / Paket

8-PowerLDFN

Fet Type

2 N-Channel (Dual)