2SK1949L-E

Teknik Özellikler

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Number Of Terminals

3

Ds Breakdown Voltagemin

60 V

Transistor Element Material

SILICON

Package Shape

RECTANGULAR

Üretici Parça No

2SK1949L-E

JESD-609 Kodu

e6

Qualification Status

Not Qualified

Polaritychannel Type

N-CHANNEL

Configuration

SINGLE WITH BUILT-IN DIODE

Additional Feature

AVALANCHE RATED

Operating Mode

ENHANCEMENT MODE

Risk Rank

5.12

Drain Currentmax Id

5 A

Package Body Material

PLASTIC/EPOXY

Case Connection

DRAIN

Pulsed Drain Currentmax Idm

20 A

Yüzey Montaj

NO

Number Of Elements

1

Terminal Pozisyonu

SINGLE

Seri

*

ECCN Kodu

EAR99

Ihs Manufacturer

RENESAS ELECTRONICS CORP

Drainsource On Resistancemax

0.2 Ω

Rohs Code

Yes

Moisture Sensitivity Levels

1

Package Style

IN-LINE

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Pin Sayısı

3

Terminal Formu

THROUGH-HOLE

Package Description

DPAK-3

Transistor Application

SWITCHING

Ürün Durumu

Active

REACH Uyumluluk Kodu

compliant

Terminal Kaplaması

Tin/Bismuth (Sn/Bi)

Paket

Bulk

Reflow Temperaturemax S

NOT SPECIFIED

Part Life Cycle Code

Not Recommended

Jesd30 Code

R-PSIP-T3