RJH65T04BDPM-A0#T2

Teknik Özellikler

Voltage Collector Emitter Breakdown Max

650 V

Reverse Recovery Time Trr

80 ns

RoHS

Details

Ürün Durumu

Active

Configuration

Single

Kılıf / Paket

TO-3PFP

Continuous Collector Current At25 C

60 A

Collector Emitter Voltage Vceo Max

650 V

Collectoremitter Saturation Voltage

1.5 V

Fabrika Paket Adedi

25

Td Onoff25c

35ns/125ns

Maximum Gate Emitter Voltage

- 20 V, + 20 V

Ürün Tipi

IGBT Transistors

Currentcollector Ic Max

60 A

Montaj Tipi

Through Hole

Pd Power Dissipation

65 W

Montaj Stili

Through Hole

Power Max

65 W

Maks. Çalışma Sıcaklığı

+ 175 C

Switching Energy

360µJ (on), 350µJ (off)

Continuous Collector Current Ic Max

30 A

Vceon Max Vge Ic

1.95V @ 15V, 30A

Test Conditions

400V, 30A, 10Ohm, 15V

Giriş Tipi

Standard

Çalışma Sıcaklığı

175°C (TJ)

Tedarikçi Cihaz Paketi

TO-3PFP

Gate Charge

74 nC

Igbt Type

Trench

Ambalaj

Tube