Adet bazlı fiyat
- 1+ adet$1.00
- 10+ adet$1.00
- 25+ adet$1.00
- 50+ adet$1.00
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Number Of Channels
- 2 Channel
- Vds Drainsource Breakdown Voltage
- 65 V
- Pd Power Dissipation
- 685 W
- Minimum Operating Temperature
- - 40 C
- Ambalaj
- Tray
- Gain
- 22.5 dB
- Vgs Gatesource Voltage
- - 2.8 V
- Seri
- QPD1025
- Maks. Çalışma Sıcaklığı
- + 85 C
- Fabrika Paket Adedi
- 18
- Montaj Stili
- Flange Mount
- Moisture Sensitive
- Yes
- Kılıf / Paket
- NI-1230-4
- RoHS
- Details
- Operating Frequency
- 1 GHz to 1.1 GHz
- Tip
- RF Power MOSFET
- Id Continuous Drain Current
- 28 A
- Output Power
- 1.862 kW
- Transistor Polarity
- Dual N-Channel
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