QJD1210011

Teknik Özellikler

Drain To Source Voltage Vdss

1200V 1.2kV

Gate Charge Qg Max Vgs

500nC @ 20V

Jesd30 Code

R-PUFM-X20

Continuous Drain Current Id

100A

Input Capacitance Ciss Max Vds

10200pF @ 800V

RoHS Durumu

RoHS Compliant

Terminal Pozisyonu

UPPER

Drainsource On Resistancemax

0.025Ohm

Operating Mode

ENHANCEMENT MODE

Max Power Dissipation

900W

Ds Breakdown Voltagemin

1200V

Vgsth Max Id

5V @ 10mA

Terminal Formu

UNSPECIFIED

Fet Feature

Silicon Carbide (SiC)

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Kılıf / Paket

Module

REACH Uyumluluk Kodu

unknown

Fet Type

2 N-Channel (Dual)

Montaj

Chassis Mount

Çalışma Sıcaklığı

-40°C~175°C TJ

Case Connection

ISOLATED

Number Of Elements

2

Parça Durumu

Active

Terminal Sayısı

20

ECCN Kodu

EAR99

Current Continuous Drain Id25

100A Tc

Ambalaj

Bulk

Nem Hassasiyeti (MSL)

1 (Unlimited)

Pulsed Drain Currentmax Idm

250A

Rds On Max Id Vgs

25m Ω @ 100A, 20V

Transistor Application

SWITCHING

Yayın Yılı

2014

Montaj Tipi

Chassis Mount