CM75DU-24H

Teknik Özellikler

Voltage Collector Emitter Breakdown Max

1200V

Collector Emitter Voltage Vceo

3.7V

Turn On Time

100 ns

Configuration

Half Bridge

Transistor Element Material

SILICON

Power Max

600W

Current Collector Cutoff Max

1mA

Parça Durumu

Obsolete

Çalışma Sıcaklığı

-40°C~150°C TJ

Itar Registered

Unavailable

Yayın Yılı

2003

Nem Hassasiyeti (MSL)

1 (Unlimited)

RoHS Durumu

RoHS Compliant

Input Capacitance Cies Vce

11nF @ 10V

Max Collector Current

75A

Pin Sayısı

7

Input

Standard

Gateemitter Voltagemax

20V

Seri

IGBTMOD™

Vceon Max Vge Ic

3.7V @ 15V, 75A

RoHS

Non-Compliant

Number Of Elements

2

Input Capacitance

11nF

Case Connection

ISOLATED

Collectoremitter Breakdown Voltage

1.2kV

Eccn

EAR99

Polaritychannel Type

N-CHANNEL

Montaj

Chassis Mount

Terminal Formu

UNSPECIFIED

Montaj Tipi

Chassis Mount

Ntc Thermistor

No

Turn Off Timenom Toff

600 ns

Transistor Application

POWER CONTROL

Terminal Pozisyonu

UPPER

Max Power Dissipation

600W

Pin Sayısı

7

Terminal Sayısı

7

Kılıf / Paket

Module