CM50DU-24H

Teknik Özellikler

Kılıf / Paket

Module

Transistor Element Material

SILICON

Power Max

400W

Nem Hassasiyeti (MSL)

1 (Unlimited)

Collectoremitter Breakdown Voltage

1.2kV

Vceon Max Vge Ic

3.7V @ 15V, 50A

Case Connection

ISOLATED

Yayın Yılı

2004

Input Capacitance

7.5nF

RoHS Durumu

RoHS Compliant

Ntc Thermistor

No

Polaritychannel Type

N-CHANNEL

Seri

IGBTMOD™

Turn Off Timenom Toff

500 ns

Montaj Tipi

Chassis Mount

Gateemitter Voltagemax

20V

Input Capacitance Cies Vce

7.5nF @ 10V

Max Power Dissipation

400W

Parça Durumu

Obsolete

Voltage Collector Emitter Breakdown Max

1200V

Input

Standard

Number Of Elements

2

Configuration

Half Bridge

Collector Emitter Voltage Vceo

3.7V

Terminal Formu

UNSPECIFIED

Pin Sayısı

7

Çalışma Sıcaklığı

-40°C~150°C TJ

Current Collector Cutoff Max

1mA

Terminal Pozisyonu

UPPER

Max Collector Current

50A

Turn On Time

80 ns

Terminal Sayısı

7

Montaj

Chassis Mount

Transistor Application

MOTOR CONTROL