BUK9614-30

Teknik Özellikler

Avalanche Energy Rating Eas

125 mJ

Polaritychannel Type

N-CHANNEL

Power Dissipationmax Abs

125 W

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Operating Mode

ENHANCEMENT MODE

Drainsource On Resistancemax

0.014 Ω

Additional Feature

ESD PROTECTED, LOGIC LEVEL COMPATIBLE

Rohs Code

No

Pulsed Drain Currentmax Idm

240 A

Jesd30 Code

R-PSSO-G2

Transistor Application

SWITCHING

Case Connection

DRAIN

Package Description

,

Part Life Cycle Code

Transferred

Operating Temperaturemax

175 °C

JESD-609 Kodu

e0

Qualification Status

Not Qualified

Package Shape

RECTANGULAR

Number Of Terminals

2

Package Style

SMALL OUTLINE

ECCN Kodu

EAR99

Drain Currentmax Id

69 A

Ihs Manufacturer

PHILIPS SEMICONDUCTORS

REACH Uyumluluk Kodu

unknown

Terminal Kaplaması

Tin/Lead (Sn/Pb)

Package Body Material

PLASTIC/EPOXY

Number Of Elements

1

Terminal Pozisyonu

SINGLE

Configuration

SINGLE

Transistor Element Material

SILICON

Ds Breakdown Voltagemin

30 V

Terminal Formu

GULL WING

Yüzey Montaj

YES