Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Resistor Base R1
- 2.2 kOhms
- Parça Durumu
- Obsolete
- Resistor Emitter Base R2
- 10 kOhms
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Collector Emitter Voltage Vceo
- 250mV
- Tedarikçi Cihaz Paketi
- NS-B1
- Yayın Yılı
- 2003
- RoHS Durumu
- RoHS Compliant
- Transistor Type
- NPN - Pre-Biased
- Collectoremitter Breakdown Voltage
- 50V
- Montaj Tipi
- Through Hole
- Akım Değeri
- 500mA
- Kılıf / Paket
- 3-SSIP
- Vce Saturation Max Ib Ic
- 250mV @ 5mA, 100mA
- Max Power Dissipation
- 300mW
- Power Max
- 300mW
- Voltage Rated Dc
- 50V
- Dc Current Gain Hfe Min Ic Vce
- 60 @ 100mA 10V
- Frequency Transition
- 200MHz
- Currentcollector Ic Max
- 500mA
- Montaj
- Through Hole
- Current Collector Cutoff Max
- 1μA
- Max Breakdown Voltage
- 50V
- Max Collector Current
- 500mA
- Ambalaj
- Tape & Reel (TR)
- Voltage Collector Emitter Breakdown Max
- 50V
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